PART |
Description |
Maker |
AT49F002A AT49F002AN AT49F002ANT AT49F002AT |
AT49F002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 5-Volt-Only. Top or Bottom Boot Parametric Block Flash 256K x 8 (2M bit), 5-Volt-Only, Top Boot Parametric Block Flash 256K x 8 (2M bit), 5-Volt-Only, Bottom Boot Parametric Block Flash
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Atmel
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AT49F002 AT49F002N-55TC |
x8 Flash EEPROM From old datasheet system 256K x 8 (2M bit), 5-Volt-Only, Top or Bottom Boot Parametric Block Flash
|
Atmel Corp
|
CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory 90ns 2M-bit CMOS flash memory 70ns 2M-bit CMOS flash memory 1 Megabit CMOS Flash Memory High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
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http:// CATALYST[Catalyst Semiconductor]
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AS28F128J3MRG-15_ET AS28F128J3MRG-15_XT AS28F128J3 |
Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture
|
Austin Semiconductor
|
W39V040A W39V040AQ W39V040AP |
3.3-Volt Flash NVM > Flash> FWH/LPC Flash Memory 512K 】 8 CMOS FLASH MEMORY WITH LPC INTERFACE
|
Winbond Electronics WINBOND[Winbond]
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AT25DF081-UUN-T AT25DF081-MHN-Y AT25DF081-MHN-T AT |
4 Mbit Uniform Sector, Serial Flash Memory 1M X 8 FLASH 1.8V PROM, PDSO8 8-megabit 1.65-volt Minimum SPI Serial Flash Memory
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Atmel, Corp. 聚兴科技股份有限公司 ATMEL Corporation
|
M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331 |
Memory>NOR type Flash Memory CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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Renesas Electronics Corporation.
|
CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA |
512K-Bit CMOS Flash Memory 512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON Semiconductor
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S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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Spansion Inc. Advanced Micro Devices, Inc. Spansion, Inc. http://
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GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM(宽30
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Intel, Corp. Intel Corp.
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LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 |
4MEG (524288words x 8bit) flash memory 4 MEG (524288 words x 8 bits) Flash Memory
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SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
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